Intel TE28F160C3BD70: A Comprehensive Technical Overview of the 16Mbit Flash Memory Chip
The Intel TE28F160C3BD70 stands as a significant component in the lineage of non-volatile memory solutions, representing a robust 16-megabit (2MB) flash memory chip engineered for high-performance applications. Manufactured on a proven 0.25-micron process technology, this device encapsulates the industry's transition towards higher density and more reliable storage in a single package. Its architecture and feature set were designed to meet the demanding requirements of telecommunications infrastructure, networking equipment, embedded systems, and automotive electronics during its era.
At its core, the TE28F160C3BD70 is organized as 2,097,152 words x 8 bits or 1,048,576 words x 16 bits, providing designers with critical flexibility for interfacing with both 8-bit and 16-bit microprocessors. This dual data width capability is managed through the BYTE pin, simplifying system design and component selection. The chip operates on a single 3.3-volt VCC supply for all read, erase, and program operations, making it a low-power solution ideal for power-sensitive designs and a forerunner to modern low-voltage memory standards.
A key feature of this memory chip is its advanced command set, which enables high-speed programming and erase operations. Intel's proprietary Advanced Boot Block architecture defines the memory array's segmentation. This architecture partitions the 16Mb into multiple asymmetrical blocks—one 16-Kbyte parameter block, two 8-Kbyte parameter blocks, one 32-Kbyte main block, and fifteen 128-Kbyte main blocks. This structure is crucial for efficient memory management, allowing critical boot code (stored in the smaller, protected parameter blocks) to be updated independently of larger data storage sections, thereby enhancing system reliability and firmware update flexibility.
Performance is a hallmark of this component. The device offers fast 70ns and 90ns maximum access times, ensuring minimal wait states for high-speed processors and thus improving overall system throughput. For write operations, it supports a write buffer feature, allowing up to 32 words (in x16 mode) to be programmed in a single operation, dramatically reducing overall programming time compared to traditional single-word programming algorithms.
Reliability is engineered into every aspect of the TE28F160C3BD70. It incorporates several hardware and software data protection mechanisms, including a hardware-based write protection that activates on power transition and a programmable block lock feature for individual memory blocks. Furthermore, it offers a minimum of 100,000 erase/program cycles per block and a data retention capability of up to 20 years, guaranteeing data integrity over the long operational life of the end product.
The chip is offered in industry-standard 48-pin TSOP (Thin Small Outline Package) and 48-ball TFBGA (Thin Fine-Pitch Ball Grid Array) packages. These compact form factors are essential for modern, space-constrained PCB designs, and the BGA option provides superior performance in high-vibration environments due to its lower inductance and smaller mounting footprint.
ICGOODFIND: The Intel TE28F160C3BD70 is a quintessential example of early high-density, low-voltage flash memory. Its blend of architectural flexibility through its boot block design, high performance with fast access times, and robust reliability features solidified its position as a trusted solution for a generation of mission-critical embedded systems.
Keywords: Intel TE28F160C3BD70, 16Mbit Flash Memory, Advanced Boot Block, 3.3-volt VCC, Non-volatile Memory
