Infineon IPP60R074C6 CoolMOS Power Transistor: Performance and Application Analysis

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Infineon's IPP60R074C6, a member of the renowned CoolMOS C6 family, stands out as a high-performance superjunction MOSFET engineered to meet these challenges head-on. This analysis delves into its key performance characteristics and typical application circuits.

At the heart of the IPP60R074C6 is Infineon's advanced superjunction (SJ) technology. This technology is the cornerstone of its exceptional performance, enabling a dramatic reduction in both on-state resistance (RDS(on)) and switching losses. Rated for 650 V and 11.7 A, this MOSFET boasts an ultra-low RDS(on) of just 74 mΩ at a gate voltage of 10 V. This low conduction loss directly translates into higher efficiency, as less power is dissipated as heat during the on-state.

Beyond its impressive static performance, the device excels in dynamic operation. The inherent advantages of the CoolMOS C6 technology lead to superior switching performance with minimal gate charge (Qg). A lower Qg means the gate driver can switch the transistor on and off more quickly and with less energy, which is crucial for high-frequency operation. This combination of low RDS(on) and low Qg is a key metric for overall performance, often quantified as the Figure of Merit (F.O.M. = RDS(on) × Qg), which is exceptionally favorable for the IPP60R074C6.

Furthermore, the transistor features a very fast and robust intrinsic body diode. This characteristic is particularly beneficial in bridge circuits, like power factor correction (PFC) or half-bridge/full-bridge topologies, where the body diode conducts during dead-time periods. Its fast reverse recovery reduces switching losses and minimizes electromagnetic interference (EMI), contributing to a more stable and efficient system.

The primary application domains for the IPP60R074C6 are in switched-mode power supplies (SMPS) and other power conversion systems. It is an ideal choice for high-efficiency server and telecom power supplies, where efficiency benchmarks like 80 Plus Titanium are mandatory. Its performance also makes it suitable for:

Power Factor Correction (PFC) boost stages (both interleaved and single-phase).

LLC resonant converters for DC-DC conversion stages.

Solar inverters and industrial motor drives.

In a typical PFC circuit, the low switching losses allow for operation at higher frequencies, which in turn reduces the size of the magnetic components. In an LLC resonant converter, the low RDS(on) minimizes conduction losses in the primary-side switches, boosting the overall efficiency of the power supply unit (PSU).

ICGOOODFIND: The Infineon IPP60R074C6 CoolMOS C6 transistor sets a high bar for power MOSFETs in its class. Its optimal blend of ultra-low on-resistance, exceptional switching speed, and a robust body diode makes it a superior component for designers aiming to push the boundaries of efficiency and power density in modern AC-DC and DC-DC power supplies.

Keywords: Superjunction MOSFET, Low RDS(on), High-Efficiency, Switching Losses, Power Supply (SMPS)